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Improve the sensitivtiy of your wireless systemWith outstanding gain and noise characteristics, Infineon G.P. and High-End Si, SiGe RF Transistors have served a wide range of wireless applications for more than 25 years. They can be used in a variety of LNAs and RF circuitries well beyond 6GHz. Overall applications include various standards e.g. ISM/RKE, TPMS, GPS, WLAN, WiMAX, cordless Phones, UWB, SDARS etc.
Innovations like BFP460 or BFP540ESD integrate of ESD protection up to 1.5 kV combined with unmatched RF Performance and make them unique vs. competitors. For high-performance BFP600 SiGe series provides the best price/performance ratio with a high gain/extremely low noise figure of 0.65 dB at 2GHz. Infineon latest SiGe:C technology B7HF for cost-effective, highest-performance RF semiconductor devices is used in the BFP700series. It provides extremely low noise figures for silicon-based discrete transistors of only 0.5 dB at 2GHz (0.75 dB at 6GHz) and high gain of up to 27.5 dB at 2GHz (19 dB at 6GHz). With the introduction of the new BFP700 series, Infineon achieves siliconbased performance levels that could previously be attained only by using more expensive technologies based GaAs. The Transistors are available in standard type SOT, flatlead TSFP and ultra miniature/flat leadless TSLP packages with a height of only 0.32mm. www.infineon.com/rf NEW: direct Links to the
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